The rapid advancement of electronic devices towards smaller, faster, and more efficient technologies necessitates the development of innovative materials and fabrication techniques. Traditional complementary metal oxide semiconductor (CMOS) technology faces significant limitations due to the incompatibility of conventional dielectrics with emerging 2D semiconductors. Conventional dielectrics such as Al₂O₃, SiO₂, and HfO₂ often damage or alter the delicate surfaces of these materials, hindering their full potential. Our research leverages non-toxic 2D liquid metal oxides (2DLMO) as a versatile dielectric material and seeding layer to address these challenges. 2DLMO offers an innovative solution for preserving the integrity of 2D semiconductors while enabling the fabrication of high-performance electronic devices.

Our interdisciplinary approach combines chemical synthesis, self-assembly, device fabrication, and electrical characterization to investigate the fundamental mechanisms governing charge transport behavior in LMO-based field-effect transistors (FETs). By integrating these functionalities, we aim to develop low-power, high-performance transistors for sensor applications, light-emitting diodes, and memory devices.

Our research leverages the unique properties of 2DLMO to enhance device performance, including improved carrier mobility, reduced power consumption, and enhanced stability. Through our collaborative efforts, we are committed to contributing to the development of next-generation electronic devices that push the boundaries of current technology.