Venkatakrishnarao Dasari
Ph.D., University of Hyderabad, Hyderabad (2018)
M.Sc., University of Hyderabad, Hyderabad (2012)
B.Sc., Silver Jubilee Govt. College. Kurnool, Andhra Pradesh. (2010)
Research Fellow, National University of Singapore, Singapore (2021)
JSPS Fellow, National Institute of Natural Science, Japan (2022 Declined)
Postdoctoral Fellow, University of Tsukuba (2022)
Scientist, A*Star Research Institutes, Singapore (2024)
Assistant Professor, IIT Bombay (September 2024 - )
Our research group is focused on developing high-performance field-effect transistors (FETs) using liquid metal oxide-assisted (LMO) gate dielectrics (Ga2O3, HfO2, and ZrO2). We explore the application of LMOs in various device architectures, including 2D semiconductors (TMDs), self-assembled monolayers (SAMs), organic, inorganic, and micro-nano-crystal systems.
Our interdisciplinary approach combines chemical synthesis, self-assembly, device fabrication, and electrical characterization to understand the charge transport phenomenon underlying LMO-based FETs and also to produce low-power-based transistors. Our research aims to contribute to the development of next-generation electronic devices with enhanced performance, efficiency, and potential applications in areas such as sensors, light-emitting field effect transistors, and memory devices.
In specific our group focuses on
1. High k-dielectric metal oxides for 2D Organic/inorganic and semiconductors
2. Liquid metal oxide-assisted molecular tunnel junctions
3. Self-assembly of organic/inorganic micro-crystals for optoelectronics