About a decade ago, we were able to form the first stable complexes of inorganic methylenes (EH2) and ethylenes (H2EEH2; E = Si, Ge or Sn), and converted some of these GeH2 adducts into Ge nanoparticles and films via thermolysis.[1] This presentation will describe our recent application of a class of P-B frustrated Lewis pair (FLP) chelate to gain access to various main group hydrides, for the deposition of the semiconducting materials Si, Ge and InP under mild conditions from solution.[2] I will also mention our attempts to apply the same FLP methodology toward the preparation of boron nitride (BN),[3] a highly sought insulator for the electronics industry. The second part of this lecture will describe a new class of polyacetylene bearing redox-active boron-, nitrogen-, and phosphorusbased groups, with enhanced air-stability, narrow optical band gaps, and redox-triggered optical switching in the telecommunications region (1500 nm) noted.[4]